• DocumentCode
    911998
  • Title

    Thickness determination of poly-Si/poly-oxide/poly-Si/SiO2/Si structure by ellipsometer

  • Author

    Chao, T.S. ; Lee, C.L. ; Lei, T.F.

  • Author_Institution
    Nat. Nano Device Lab., Hsinchu, Taiwan
  • Volume
    29
  • Issue
    13
  • fYear
    1993
  • fDate
    6/24/1993 12:00:00 AM
  • Firstpage
    1157
  • Lastpage
    1159
  • Abstract
    An ellipsometry measurement method is proposed to measure poly-Si/poly-oxide/poly-Si/SiO2/Si structure. The thickness of each layer in this structure can be easily obtained by a conventional ellipsometry measurement. The measured result is consistent with that of cross-sectional TEM.
  • Keywords
    elemental semiconductors; ellipsometry; semiconductor-insulator boundaries; semiconductor-insulator-semiconductor structures; silicon; silicon compounds; thickness measurement; SiO 2-Si; ellipsometry measurement method; poly-Si/poly-oxide/poly-Si/SiO 2/Si structure; polycrystalline Si layer; thickness;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930774
  • Filename
    219240
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=911998