DocumentCode :
911998
Title :
Thickness determination of poly-Si/poly-oxide/poly-Si/SiO2/Si structure by ellipsometer
Author :
Chao, T.S. ; Lee, C.L. ; Lei, T.F.
Author_Institution :
Nat. Nano Device Lab., Hsinchu, Taiwan
Volume :
29
Issue :
13
fYear :
1993
fDate :
6/24/1993 12:00:00 AM
Firstpage :
1157
Lastpage :
1159
Abstract :
An ellipsometry measurement method is proposed to measure poly-Si/poly-oxide/poly-Si/SiO2/Si structure. The thickness of each layer in this structure can be easily obtained by a conventional ellipsometry measurement. The measured result is consistent with that of cross-sectional TEM.
Keywords :
elemental semiconductors; ellipsometry; semiconductor-insulator boundaries; semiconductor-insulator-semiconductor structures; silicon; silicon compounds; thickness measurement; SiO 2-Si; ellipsometry measurement method; poly-Si/poly-oxide/poly-Si/SiO 2/Si structure; polycrystalline Si layer; thickness;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930774
Filename :
219240
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=911998
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