DocumentCode
912036
Title
Channel Length Dependence of the Body-Factor Effect in NMOS Devices
Author
Simard-Normandin, Martine
Author_Institution
Research and Development Laboratory, Fairchild Camera and Instrument Corp., Palo Alto, CA, USA
Volume
2
Issue
1
fYear
1983
fDate
1/1/1983 12:00:00 AM
Firstpage
2
Lastpage
4
Abstract
The dependence of threshold voltage on substrate bias in NMOS devices is reevaluated in the light of a large sample of data for short-channel length devices (0.8 ?m < L < 8 ?m). Existing models [1], [2] do not fit the data with the necessary accuracy for circuit simulation of short channel devices. A new model involving only process parameters is presented which may also be used to evaluate xj and Nsub from a limited amount of observations if long channel devices are not available. Agreement with SUPREM is excellent.
Keywords
Analytical models; Capacitors; Circuit simulation; Equations; Helium; MOS devices; MOSFETs; Semiconductor process modeling; Threshold voltage; Very large scale integration;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.1983.1270015
Filename
1270015
Link To Document