DocumentCode
912067
Title
High I-V product LT-GaAs MISFET structure
Author
Splingart, B. ; Kohn, Erhard
Volume
29
Issue
13
fYear
1993
fDate
6/24/1993 12:00:00 AM
Firstpage
1170
Lastpage
1172
Abstract
Low temperature (LT) GaAs MISFETs with 680 mA/mm drain current and 28 V drain voltage have been fabricated. This represents the highest I-V product of a GaAs FET to date, indicating an RF-power handling capability of 2.1 W/mm. The weak dependence of the breakdown voltage on the doping-thickness product indicates that further improvements are possible.
Keywords
III-V semiconductors; gallium arsenide; insulated gate field effect transistors; passivation; 0.6 micron; 200 to 580 degC; 28 V; GaAs; I-V product; MISFET structure; RF-power handling capability; breakdown voltage; doping-thickness product; low temperature passivation fabrication; submicron gate length;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930782
Filename
219248
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