Title :
High I-V product LT-GaAs MISFET structure
Author :
Splingart, B. ; Kohn, Erhard
fDate :
6/24/1993 12:00:00 AM
Abstract :
Low temperature (LT) GaAs MISFETs with 680 mA/mm drain current and 28 V drain voltage have been fabricated. This represents the highest I-V product of a GaAs FET to date, indicating an RF-power handling capability of 2.1 W/mm. The weak dependence of the breakdown voltage on the doping-thickness product indicates that further improvements are possible.
Keywords :
III-V semiconductors; gallium arsenide; insulated gate field effect transistors; passivation; 0.6 micron; 200 to 580 degC; 28 V; GaAs; I-V product; MISFET structure; RF-power handling capability; breakdown voltage; doping-thickness product; low temperature passivation fabrication; submicron gate length;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930782
