Title :
Effects of the doping profile on current characteristics in BSITs
Author :
Kim, Chang-Woo ; Kimura, Masakazu ; Yano, Koji ; Tanaka, Akira ; Sukegawa, Tokuzo
Author_Institution :
Sch. of Electron. Sci. & Technol., Shizuoka Univ., Hamamatsu, Japan
Abstract :
Proposed are two doping profiles of the conducting channel in bipolar-mode static induction transistors (BSITs) that improve the current handling capability. By using the results obtained from two-dimensional device simulations, it is shown that BSITs with the proposed profiles exhibit higher drain current density and DC current gain than conventional BSITs. Also discussed is the tradeoff between the current and voltage capabilities.<>
Keywords :
doping profiles; field effect transistors; power transistors; semiconductor device models; DC current gain; SIT; bipolar-mode; conducting channel; current capability; current characteristics; current handling capability; doping profile; drain current density; static induction transistors; two-dimensional device simulations; voltage capabilities; Conducting materials; Current density; Doping profiles; Geometry; Impurities; Solid modeling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
