Title :
Effects of the third-electrode positions on three-terminal GaAs p+n-δ(p+)n-n+ switching devices
Author :
Yarn, K.F. ; Wang, Y.H. ; Liou, C.P. ; Jame, M.S. ; Chang, C.Y.
Author_Institution :
National Cheng Kung University, Department of Electrical Engineering, Institute of Electrical & Computer Engineering, Tainan, Republic of China
fDate :
8/1/1987 12:00:00 AM
Abstract :
GaAs p+n- δ(p+)n-n+ 3-terminal switching devices prepared by molecular beam epitaxy are fabricated. The positions of the third electrode are found to affect the device characteristics profoundly. The effects of 3rd-electrode positions with bias conditions are investigated in the paper. Control efficiency is then defined to compare the device performance.
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; semiconductor switches; GaAs; III-V semiconductor; bias conditions; control efficiency; molecular beam epitaxy; p+ n-¿( p+) n- n+; third-electrode positions; three-terminal switching devices; Semiconductor devices and materials, Switches and switching theory;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1987.0024
