Title :
Direct extraction of MOSFET dynamic thermal characteristics from standard transistor structures using small signal measurements
Author :
Redman-White, William ; Lee, M.S.L. ; Tenbroek, B.M. ; Uren, M.J. ; Bunyan, R.J.T.
Author_Institution :
Southampton Univ., UK
fDate :
6/24/1993 12:00:00 AM
Abstract :
A method is presented for directly obtaining the temperature rise in MOSFETs due to channel current self-heating. The technique is based on small signal measurements, and also provides thermal time-constant data. No special layout structures are needed, making it suitable for bulk and SOI technologies. Experimental results are compared with data obtained using thermal noise measurements with a special SOI MOSFET, and the two figures show good agreement.
Keywords :
insulated gate field effect transistors; semiconductor-insulator boundaries; temperature distribution; thermal analysis; MOSFETs; SOI MOSFET; channel current self-heating; dynamic thermal characteristics; small signal measurements; temperature rise; thermal capacity; thermal time-constant data;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930789
