Title :
Some new properties of forward-biased emitter-base junction of gigahertz silicon transistors
Author :
Chamberlain, S.G.
Author_Institution :
University of Waterloo, Department of Electrical Engineering, Waterloo, Canada
Abstract :
Accurate numerical solutions of a p+-n junction revealed that its capacitance becomes negative under large forward bias. Small-signal measurements were made on the forward-biased emitter-base junction of transistors in the frequency range of 1 MHz-2.4 GHz. These measurements revealed the negative capacitance (inductive effects). The numerical and experimental results are in good agreement.
Keywords :
microwave devices; p-n junctions; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700582
