Title :
An Efficient Numerical Algorithm for Simulation of MOS Capacitance
Author :
Jaeger, Richard C. ; Gaensslen, Fritz H. ; Diehl, Sherra E.
Author_Institution :
Electrical Engineering Department, Auburn University, Auburn, AL, USA
fDate :
4/1/1983 12:00:00 AM
Abstract :
A new, computationally efficient method for the numerical evaluation of the equilibrium capacitance of one-dimensional MOS structures is presented. Capacitance-voltage (C-V) characteristics for arbitary impurity profiles and interface state distributions can be calculated for temperatures ranging from 50 K to 350 K. Examples of simulated C-V characteristics demonstrate the capability of the computer program MOSCAP using these techniques.
Keywords :
Capacitance; Capacitance-voltage characteristics; Computational modeling; Computer interfaces; Computer simulation; Distributed computing; Impurities; Interface states; Numerical simulation; Temperature distribution;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.1983.1270027
