Numerical simulation of the dynamics of field impoverishment modes

The possibility of low field and reversed step domains in multivalley semiconductors was first suggested over 20 years ago by Copeland [1] and was re-examined more recently by a different method [2]. Both refer only to the possibility of stationary domains, which, once formed, propagate along an infinite device. Appropriate initial and cathode conditions are established for GaAs by numerical simulation using Boltzmann´s transport equation and assuming constant voltage at the terminals. These conditions may lead to the repeated formation of these domains, giving rise to transmit time modes, and seem promising in providing a higher power transfer than traditional ones, because the sign of the bulk charge is reversed while domain velocity and field directions remain opposite to each other. Hot electron launching, which is indispensable to the process, might be achieved by suitable heteroj unctions, namely at the cathode. AlxGa1¿xAs/GaAs is a possibility. So far, no experimental evidence of the existence of these domains has been reported.