Title :
On the validity of the gradual-channel approximation for field-effect transistors
Author :
Choong-Ki Kim ; Yang, E.S.
fDate :
5/1/1970 12:00:00 AM
Abstract :
The valid range of the gradual-channel approximation is found in terms of the width of the conductive channel. Limitations of the approximation for the description of field-effect devices are clarified by considering the external characteristics and the internal conduction mechanism separately.
Keywords :
Electrons; FETs; NASA; Neodymium; Radio access networks; Tin; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7778
