Title :
Improved performance of CW silicon TRAPATT oscillators
Author :
Evans, W.J. ; Johnston, Roy L.
fDate :
5/1/1970 12:00:00 AM
Abstract :
This letter reports the first CW operation of silicon TRAPATT diodes in the microwave region. In particular, CW operation of silicon diodes, using room temperature heat sinking, has been obtained from 2.5 to 4.0 GHz. The maximum power output achieved thus far has been 3.0 watts and the maximum efficiency has been 20 percent.
Keywords :
Difference equations; Diodes; Electromagnetic heating; Frequency; Germanium; Heat sinks; Microwave oscillators; Silicon; Temperature; Transient response;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7781
