• DocumentCode
    912258
  • Title

    Improved performance of CW silicon TRAPATT oscillators

  • Author

    Evans, W.J. ; Johnston, Roy L.

  • Volume
    58
  • Issue
    5
  • fYear
    1970
  • fDate
    5/1/1970 12:00:00 AM
  • Firstpage
    845
  • Lastpage
    846
  • Abstract
    This letter reports the first CW operation of silicon TRAPATT diodes in the microwave region. In particular, CW operation of silicon diodes, using room temperature heat sinking, has been obtained from 2.5 to 4.0 GHz. The maximum power output achieved thus far has been 3.0 watts and the maximum efficiency has been 20 percent.
  • Keywords
    Difference equations; Diodes; Electromagnetic heating; Frequency; Germanium; Heat sinks; Microwave oscillators; Silicon; Temperature; Transient response;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1970.7781
  • Filename
    1449711
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912258