Title :
10 Gbit/s operation of polarisation insensitive, strained InGaAsP/InGaAsP MQW electroabsorption modulator
Author :
Devaux, F. ; Chelles, S. ; Ougazzaden, A. ; Mircea, A. ; Huet, Fabrice ; Carre, M.
Author_Institution :
France Telecom, CNET, Bagneux, France
fDate :
6/24/1993 12:00:00 AM
Abstract :
Polarisation-independent operation of a strained InGaAsP/InGaAsP multiquantum well electroabsorption modulator is reported for the first time. A clearly open eye diagram is observed at 10 Gbit/s with scrambled polarisation state of input light. The chirp parameter is also reported for both TE and TM.
Keywords :
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; gallium compounds; indium compounds; light polarisation; optical modulation; semiconductor quantum wells; 10 Gbit/s; InGaAsP; MQW electroabsorption modulator; chirp parameter; clearly open eye diagram; polarisation insensitivity; scrambled polarisation state;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930803
