Title :
Observation of high-field domains in n type indium phosphide
Author :
Boers, P.M. ; Acket, G.A. ; Paxman, D.H. ; Tree, R.J.
Author_Institution :
Philips Research Laboratories, NV Philips´ Gloeilampenfabrieken, Eindhoven, Netherlands
Abstract :
Transit-time oscillations involving dipole domains in long samples of InP are reported. Impact ionisation can occur within the domains. The domain velocity was determined by probe measurements. Under certain circumstances, oscillations at frequencies much higher than the transit-time frequency were observed. Conclusions concerning the velocity/field characteristic are presented.
Keywords :
domains; indium compounds; microwave generation; semiconductor materials; <111> oriented samples; high field domains; impact ionization; long samples; n type InP; probe measurements; transit time frequencies; velocity field characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710001
