Simple method to determine the si/sio2 fast interface trap density change after high field stress on silicon-on-insulator substrates

A simple method based on quasistatic capacitance-voltage measurements is described to determine the change in the Si/SiO2 fast interface trap distribution after high field stress. The method is independent of substrate type and enables the density of states distribution to be determined in the bandgap. However, the absolute energy of the traps is only known within an additive constant of comparable magnitude to the effective flatband voltage. Examples of the method are presented for a nonuniformly doped substrate and a high resistivity silicon-on-sapphire substrate.