• DocumentCode
    912351
  • Title

    Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers

  • Author

    Cristoloveanu, Sorin ; Williams, Stephen

  • Author_Institution
    Lab. de Phys. de Composants a Semicond., Grenoble, France
  • Volume
    13
  • Issue
    2
  • fYear
    1992
  • Firstpage
    102
  • Lastpage
    104
  • Abstract
    A pseudo-MOS transistor can be activated in as-grown silicon-on-insulator (SOI) structures without any device processing by using point-contact probes. The measurement setup for in-situ operation and typical transistor characteristics are presented. Parameters are extracted which relate to minority and majority carriers, buried oxide, and the Si-SiO/sub 2/ interface.<>
  • Keywords
    MOS integrated circuits; insulated gate field effect transistors; integrated circuit testing; minority carriers; semiconductor device testing; semiconductor-insulator boundaries; SIMOX; SOI structures; Si-SiO/sub 2/ interface; buried oxide; in-situ characterization; majority carriers; measurement setup; point-contact probes; pseudoMOS transistor; transistor characteristics; Capacitance; Crystallization; Insulation; MOSFETs; Microelectronics; Probes; Semiconductor films; Silicon on insulator technology; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.144972
  • Filename
    144972
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912351