Title :
Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers
Author :
Cristoloveanu, Sorin ; Williams, Stephen
Author_Institution :
Lab. de Phys. de Composants a Semicond., Grenoble, France
Abstract :
A pseudo-MOS transistor can be activated in as-grown silicon-on-insulator (SOI) structures without any device processing by using point-contact probes. The measurement setup for in-situ operation and typical transistor characteristics are presented. Parameters are extracted which relate to minority and majority carriers, buried oxide, and the Si-SiO/sub 2/ interface.<>
Keywords :
MOS integrated circuits; insulated gate field effect transistors; integrated circuit testing; minority carriers; semiconductor device testing; semiconductor-insulator boundaries; SIMOX; SOI structures; Si-SiO/sub 2/ interface; buried oxide; in-situ characterization; majority carriers; measurement setup; point-contact probes; pseudoMOS transistor; transistor characteristics; Capacitance; Crystallization; Insulation; MOSFETs; Microelectronics; Probes; Semiconductor films; Silicon on insulator technology; Substrates; Voltage;
Journal_Title :
Electron Device Letters, IEEE
