Title :
Automatic measurement of minority carrier lifetimes in silicon for nonuniform doped samples using the Zerbst method
Author :
McGillivray, Ian G. ; Robertson, John M. ; Walton, Anthony J.
Author_Institution :
University of Edinburgh, Edinburgh Microfabrication Facility, Department of Electrical Engineering, Edinburgh, UK
fDate :
12/1/1987 12:00:00 AM
Abstract :
One of the problems of automatically measuring lifetime using the Zerbst technique is the estimation of the total time required for measurement. The paper addresses this problem, and the proposed method is applicable to both uniform and nonuniformly doped samples. This enables the data to be measured in a manner which ensures that noise free plots are obtained.
Keywords :
carrier lifetime; characteristics measurement; electric variables measurement; elemental semiconductors; minority carriers; semiconductor device testing; semiconductor doping; silicon; Si; Zerbst method; automatic measurement; minority carrier lifetimes; noise free plots; nonuniform doped samples; uniformly doped samples;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1987.0032
