DocumentCode
912377
Title
Automatic measurement of minority carrier lifetimes in silicon for nonuniform doped samples using the Zerbst method
Author
McGillivray, Ian G. ; Robertson, John M. ; Walton, Anthony J.
Author_Institution
University of Edinburgh, Edinburgh Microfabrication Facility, Department of Electrical Engineering, Edinburgh, UK
Volume
134
Issue
6
fYear
1987
fDate
12/1/1987 12:00:00 AM
Firstpage
161
Lastpage
167
Abstract
One of the problems of automatically measuring lifetime using the Zerbst technique is the estimation of the total time required for measurement. The paper addresses this problem, and the proposed method is applicable to both uniform and nonuniformly doped samples. This enables the data to be measured in a manner which ensures that noise free plots are obtained.
Keywords
carrier lifetime; characteristics measurement; electric variables measurement; elemental semiconductors; minority carriers; semiconductor device testing; semiconductor doping; silicon; Si; Zerbst method; automatic measurement; minority carrier lifetimes; noise free plots; nonuniform doped samples; uniformly doped samples;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1987.0032
Filename
4644377
Link To Document