Title :
Q band GaAs Schottky-barrier IMPATT
Author :
Rodgers, J.M. ; Pomeroy, Robina C.
Author_Institution :
Royal Radar Establishment, Great Malvern, UK
Abstract :
Microwave power at Q band is reported from GaAs Schottky-barrier avalanche diodes. A nickel-contacted epitaxial GaAs structure in a flipped mesa configuration was used. In a Q band waveguide cavity, 0.5 W was obtained at 26.7 GHz using a pulsed voltage source.
Keywords :
IMPATT devices; Schottky-barrier diodes; avalanche diodes; microwave oscillators; GaAs Schottky barrier avalanche diodes; IMPATT mode; operation at Q-band frequencies; peak power 0.5 W at 26.7 GHz;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710015
