• DocumentCode
    912447
  • Title

    Channel shape in a insulated gate field-effect transistor

  • Author

    Gnadinger, A.P. ; Talley, H.E.

  • Volume
    58
  • Issue
    6
  • fYear
    1970
  • fDate
    6/1/1970 12:00:00 AM
  • Firstpage
    916
  • Lastpage
    917
  • Abstract
    By defining the channel thickness of an IGFET in terms of the total mobile charge in the channel, it is shown that the channel thickness decreases with increasing surface field and increases from source to drain, being undefined beyond the pinch-off point if the IGFET is operated in saturation.
  • Keywords
    FETs; Frequency; Insulation; Microwave devices; Millimeter wave technology; Millimeter wave transistors; Plasma devices; Plasma waves; Shape; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1970.7799
  • Filename
    1449729
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912447