Title :
Channel shape in a insulated gate field-effect transistor
Author :
Gnadinger, A.P. ; Talley, H.E.
fDate :
6/1/1970 12:00:00 AM
Abstract :
By defining the channel thickness of an IGFET in terms of the total mobile charge in the channel, it is shown that the channel thickness decreases with increasing surface field and increases from source to drain, being undefined beyond the pinch-off point if the IGFET is operated in saturation.
Keywords :
FETs; Frequency; Insulation; Microwave devices; Millimeter wave technology; Millimeter wave transistors; Plasma devices; Plasma waves; Shape; Solid state circuits;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7799
