Title :
High-power K-band silicon avalanche-diode oscillators
Author :
Liu, S.G. ; Risko, J.J. ; Chang, K.K.N.
fDate :
6/1/1970 12:00:00 AM
Abstract :
Large-size silicon avalanche diodes operating at a current density of over 8000 A/cm2have produced pulsed power output of 17 W at 24.0 GHz, and 28 W at 10.5 GHz. A decrease in average voltage up to 25 percent has been observed across the diode during oscillation at its peak power output. This and other experimental results are discussed in terms of a "quenched-plasma" effect in the diode.
Keywords :
Circuit optimization; Diodes; K-band; L-band; Oscillators; Pulse measurements; Radio frequency; Silicon; Tuning; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7801
