• DocumentCode
    912479
  • Title

    High-power K-band silicon avalanche-diode oscillators

  • Author

    Liu, S.G. ; Risko, J.J. ; Chang, K.K.N.

  • Volume
    58
  • Issue
    6
  • fYear
    1970
  • fDate
    6/1/1970 12:00:00 AM
  • Firstpage
    919
  • Lastpage
    920
  • Abstract
    Large-size silicon avalanche diodes operating at a current density of over 8000 A/cm2have produced pulsed power output of 17 W at 24.0 GHz, and 28 W at 10.5 GHz. A decrease in average voltage up to 25 percent has been observed across the diode during oscillation at its peak power output. This and other experimental results are discussed in terms of a "quenched-plasma" effect in the diode.
  • Keywords
    Circuit optimization; Diodes; K-band; L-band; Oscillators; Pulse measurements; Radio frequency; Silicon; Tuning; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1970.7801
  • Filename
    1449731
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912479