Title :
Three-Dimensional Monte Carlo Simulations--Part I: Implanted Profiles for Dopants in Submicron Device
Author :
Mazzone, A.M. ; Rocca, G.
Author_Institution :
CNR Institute LAMEL, Bologna, Italy
fDate :
1/1/1984 12:00:00 AM
Abstract :
Monte Carlo methods are used to simulate implants. The results fall into two different groups. On one side, size-dependent effects due to the presence of the mask are analyzed and discussed. On the other side, physical mechanisms dependent on dose and energy, like channeling and transition crystal-amorphous, are briefly reviewed.
Keywords :
Amorphous materials; Circuit simulation; Computational modeling; Control theory; Distribution functions; Industrial electronics; Lattices; Mathematics; Monte Carlo methods; Semiconductor process modeling;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.1984.1270058
