Title :
Energy Dependence of Proton-Induced Displacement Damage in Gallium Arsenide
Author :
Burke, E.A. ; Dale, C.J. ; Campbell, A.B. ; Summers, G.P. ; Stapor, W.J. ; Xapsos, M.A. ; Palmer, T. ; Zuleeg, R.
Author_Institution :
Mission Research Corporation 5434 Ruffin Road San Diego, CA 92123
Abstract :
Nonionizing energy deposition in gallium arsenide has been calculated for protons with energies ranging from 1 to 1000 MeV. The calculations are compared with new experimental results for ion implanted gallium arsenide resistors and Hall samples irradiated with protons in the energy range 1 to 60 MeV. Results are also compared with recent studies of proton induced displacement damage in silicon.
Keywords :
Conductivity; Electroencephalography; Energy loss; Gallium arsenide; Helium; Laboratories; Microelectronics; Protons; Resistors; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1987.4337456
