Title :
Mathematical 2-dimensional model of semiconductor devices
Author :
Vandorpe, D. ; Xuong, Nguyen Huy
Author_Institution :
Institut de Mathématiques Appliquées, Institut de Physique Nucléaire de Lyon et, Grenoble/Gare, France
Abstract :
An iterative process for the research of the solution of the 2-dimensional semiconductor transport equations system is presented. It is possible, with this process, to obtain the values of potential, hole and electron concentrations at all points of the device for any polarisation value.
Keywords :
semiconductor device models; electron concentration; electrostatic potential; hole concentration; iterative process; polarisation value; semiconductor device models; two dimensional semiconductor transport equations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710033
