DocumentCode
912692
Title
HIgh-Power C-Band Multiple-IMPATT-Diode Amplifiers
Author
Lee, Robert E. ; Gysel, Ulrich H. ; Parker, Don
Volume
24
Issue
5
fYear
1976
fDate
5/1/1976 12:00:00 AM
Firstpage
249
Lastpage
253
Abstract
The design considerations and performance characteristics of two high-power microwave reflection amplifiers that use multiple silicon IMPATT diodes are presented. The amplifiers employ microstrip hybrid-circuit-type power combiners to combine the individually matched IMPATT diodes. The first unit, a single-stage 4-diode amplifier, produced 8-W output with 6-dB gain while the second 12-diode amplifier gave 15.8-W output at about 9-dB gain. FM and AM noise added by these amplifiers has been measured with each amplifier driven to nearly full output. Use of microstrip hybrid-circuit power combiners appears to offer a simple and economical design approach for the implementation of microwave solid-state power amplifiers using multiple active devices.
Keywords
Diodes; High power amplifiers; Microstrip; Microwave amplifiers; Noise measurement; Power amplifiers; Power combiners; Power generation economics; Reflection; Silicon;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1976.1128831
Filename
1128831
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