Title :
New dynamic semiconductor laser model based on the transmission-line modelling method
Author_Institution :
University of Nottingham, Department of Electrical and Electronic Engineering, Nottingham, UK
fDate :
10/1/1987 12:00:00 AM
Abstract :
A versatile semiconductor laser model has been developed by the addition of a frequency-dependent gain model to the transmission-line modelling (TLM) method. The model provides a sampled optical output waveform for a modulated laser, from which output spectra may be found. To minimise computing time, a technique of sampling below the optical frequency is introduced. The theoretical basis for this model is considered, and the results gained for a 300 ¿¿m cavity heterojunction laser are compared with those given by the solution of the rate equations.
Keywords :
laser cavity resonators; laser theory; laser transitions; semiconductor junction lasers; 300 micron; cavity heterojunction laser; frequency-dependent gain model; modulated laser; sampled optical output waveform; semiconductor laser model; transmission-line modelling method;
Journal_Title :
Optoelectronics, IEE Proceedings J
DOI :
10.1049/ip-j.1987.0047