DocumentCode :
912739
Title :
New dynamic semiconductor laser model based on the transmission-line modelling method
Author :
Lowery, A.J.
Author_Institution :
University of Nottingham, Department of Electrical and Electronic Engineering, Nottingham, UK
Volume :
134
Issue :
5
fYear :
1987
fDate :
10/1/1987 12:00:00 AM
Firstpage :
281
Lastpage :
289
Abstract :
A versatile semiconductor laser model has been developed by the addition of a frequency-dependent gain model to the transmission-line modelling (TLM) method. The model provides a sampled optical output waveform for a modulated laser, from which output spectra may be found. To minimise computing time, a technique of sampling below the optical frequency is introduced. The theoretical basis for this model is considered, and the results gained for a 300 ¿¿m cavity heterojunction laser are compared with those given by the solution of the rate equations.
Keywords :
laser cavity resonators; laser theory; laser transitions; semiconductor junction lasers; 300 micron; cavity heterojunction laser; frequency-dependent gain model; modulated laser; sampled optical output waveform; semiconductor laser model; transmission-line modelling method;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings J
Publisher :
iet
ISSN :
0267-3932
Type :
jour
DOI :
10.1049/ip-j.1987.0047
Filename :
4644417
Link To Document :
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