Title :
Solving the Poisson´s and Schrodinger´s equations to calculate the electron states in quantum nanostructures using the finite element method
Author :
Lapaul, S. ; de Lustrac, A. ; Bouillault, F.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
fDate :
5/1/1996 12:00:00 AM
Abstract :
In recent years, the sizes of semiconductor nanostructures have become so small that we have to take into account quantum effects. Simultaneously the real geometry of the device is important. In this paper, the two dimensional electron wave functions and the quantized states energies are calculated from the Schrodinger´s equation coupled with Poisson´s equation using a finite element method. The system of equations is solved iteratively to a sell consistent solution. We have simulated two devices with different carriers confinement. We obtain the carriers density and energy, conduction band and potential in these structures
Keywords :
Schrodinger equation; carrier density; conduction bands; eigenvalues and eigenfunctions; finite element analysis; high electron mobility transistors; interface states; iterative methods; semiconductor device models; semiconductor quantum wires; two-dimensional electron gas; wave functions; HEMT; Poisson´s equation; Schrodinger´s equation; electron states; finite element method; quantum nanostructures; quantum wire structure; Boundary conditions; Carrier confinement; Charge carrier density; Eigenvalues and eigenfunctions; Electrons; Finite element methods; Geometry; Integral equations; Nanostructures; Poisson equations; Schrodinger equation; Semiconductor nanostructures; Symmetric matrices; Wave functions;
Journal_Title :
Magnetics, IEEE Transactions on