Title :
Temperature-Induced Rebound in Power MOSFETs
Author :
Singh, Gurbax ; Galloway, Kenneth F. ; Russell, Thomas J.
Author_Institution :
Semiconductor Electronics Division National Bureau of Standards Gaithersburg, MD 20899 and Department of Natural Sciences University of Maryland Eastern Shore Princess Anne, MD 21853
Abstract :
Enhancement-mode n-channel power MOSFETs were investigated for rebound. They received 300 krad(Si) gamma dose under positive gate bias with source and drain grounded. The irradiated transistors were thermally annealed with all terminals shorted or under positive gate bias with drain and source shorted, at temperatures from 60°C to 150°C. Threshold voltage rebound was observed for some transistor types under certain experimental conditions.
Keywords :
Annealing; Current measurement; Ionizing radiation; MOSFETs; Manufacturing; Power measurement; Power supplies; Temperature; Testing; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1987.4337481
