DocumentCode
912827
Title
Foreword, Jun. 1976
Author
Liechti, C.A.
Volume
24
Issue
6
fYear
1976
fDate
6/1/1976 12:00:00 AM
Firstpage
277
Lastpage
278
Abstract
Field-Effect Transistor Technology is a very dynamic field in microwaves today. Improvements in both low-noise and high-power FET´s are being made continuously in many countries around the world. It is the purpose of this Special Issue to introduce this topic with a comprehensive review paper and to highlight advances in the development of microwave FET´s and their applications. Authors from Japan, Europe, and North America report recent achievements of ongoing work in this issue. Their contributions reflect the following trends in the direction of developments.
Keywords
Broadband amplifiers; Gallium arsenide; High power amplifiers; Low-noise amplifiers; MESFETs; Microwave FETs; Microwave amplifiers; Microwave devices; Microwave technology; Solid state circuits;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1976.1128844
Filename
1128844
Link To Document