Submicron Single-Gate and Dual-Gate GaAs MESFET´s with Improved Low Noise and High Gain Performance

Microwave performance of single-gate and dual-gate GaAs MESFET´s with submicron gate structure is described. Design consideration and device technologies are also discussed. The performance of these GaAs MESFET´s exceeds previous performance with regard to lower noise and higher gain up to X band: 2.9-dB noise figure (NF) and 10.0-dB associated gain at 12 GHz for a 0.5-mu m single-gate MESFET, and 3.9-dB NF and 13.2-dB associated gain at the same frequency for a dual-gate MESFET with two 1-mu m gates.