Title :
Power GaAs MESFET with a High Drain-Source Breakdown Voltage
Author :
Fukuta, Masumi ; Suyama, Katsuhiko ; Suzuki, Hidetake ; Nakayama, Yoshiro ; Ishikawa, Hajime
fDate :
6/1/1976 12:00:00 AM
Abstract :
A power GaAs MESFET with a high drain-source breakdown voltage in excess of 17 V has been developed. A selective GaAs epitaxial process is introduced to form "inlaid" n+ source and drain regions that can provide a high drain-source breakdown voltage and a low ohmic-contact resistance. Typical characteristics of the MESFET composed of two-cell units are as follows:
Keywords :
Bipolar transistors; Electric breakdown; FETs; Gain; Gallium arsenide; Helium; Linearity; Low voltage; MESFETs; Power generation;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1976.1128848
