• DocumentCode
    912882
  • Title

    Some Aspects of GaAs MESFET Reliability

  • Author

    Abbott, David A. ; Turner, Jaivies A.

  • Volume
    24
  • Issue
    6
  • fYear
    1976
  • fDate
    6/1/1976 12:00:00 AM
  • Firstpage
    317
  • Lastpage
    321
  • Abstract
    The results of a short study into the reliability and failure modes of GaAs MESFET´s are presented. Two failure modes have been observed during this study and improved fabrication techniques that reduce their occurrence have been examined. The results obtained indicate that extremely reliable devices can be manufactured with a predicted mean time to failure in excess of 107 h at junction temperatures of 70°C. Room-temperature life tests in excess of 1/2 million device hours lend support to these predictions.
  • Keywords
    Electron devices; Gallium arsenide; Germanium; Gold; MESFETs; Metallization; Microwave devices; Silicon; Temperature; Testing;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1976.1128849
  • Filename
    1128849
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912882