Title :
Broad-Band Medium-Power Amplification in the 2-12.4-GHz Range with GaAs MESFET´s
Author :
Hornbuckle, Derry P. ; Kuhlman, Louis J., Jr.
fDate :
6/1/1976 12:00:00 AM
Abstract :
The design of 100-mW GaAs MESFET amplifiers for the 2-6.2-GHz and 5.9-12.4-GHz bands is described. Both small-signal and large-signal matching considerations are presented to obtain a minimum 10-dB gain using a 1-mu m GaAs MESFET. Three combination techniques, direct paralleling, resistive combiners, and hybrid quadrature couplers are discussed. Finally, considerations for absolute stability are presented.
Keywords :
Bandwidth; Circuits; Gallium arsenide; High power amplifiers; Impedance matching; Low-noise amplifiers; MESFETs; Microwave measurements; Power amplifiers; Semiconductor device measurement;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1976.1128852
