Varactor-tuned X band Gunn oscillator using lumped thin-film circuits

The operation of a varactor-tuned oscillator using an unen-capsulated Gunn and varactor diode is described, where the associated circuit consists of lumped elements fabricated using thin-film techniques. Depending on the GaAs material, the oscillator provides output powers greater than 10 mW and a tunable 3 dB bandwidth in excess of 1 GHz. At zero varactor bias, the frequency can be set in the 7¿12 GHz range. Satisfactory correlation with the theory is demonstrated.