Title :
A 6-GHz Four-Stage GaAs MESFET Power Amplifier (Short Papers)
Author :
Arai, Yutaro ; Kouno, T. ; Horimatsu, Tetsuo
fDate :
6/1/1976 12:00:00 AM
Abstract :
A 6-GHz GaAs MESFET power amplifier with 1-W output power, 26dB gain, and 8-dB noise figure is described. It is a fully integrated four-stage amplifier with an efficiency of 22 percent. The third-order intermodulation product is 31.5 dB below the carrier at an output power of 1 W.
Keywords :
Gallium arsenide; Low-noise amplifiers; MESFETs; Microwave FETs; Microwave amplifiers; Microwave communication; Microwave devices; Optical amplifiers; Power amplifiers; Semiconductor device noise;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1976.1128859
