Title :
Feedback Effects in the GaAs MESFET Model (Letters)
fDate :
6/1/1976 12:00:00 AM
Abstract :
GaAs MESFET models correctly predict a positive feedback conductance. The effect of common-lead inductance on Y12 rising computer modeling techniques is examined. Experimental data are also included which indicate that the common-lead inductance of about 0.06 nH cannot be omitted from the model in order to accurately predict the feedback conductance.
Keywords :
Capacitance; Feedback; Frequency; Gallium arsenide; Indium tin oxide; Inductance; MESFETs; Microwave devices; Predictive models; Schottky diodes;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1976.1128860
