• DocumentCode
    912993
  • Title

    Radiation hard 1.0μm CMOS technology

  • Author

    Lee, K.H. ; Desko, John C. ; Kohler, Ross A. ; Lawrence, Cris W. ; Nagy, William J. ; Shimer, Julie A. ; Steenwyk, Steven D. ; Anderson, Richard E. ; Fu, Julia S.

  • Volume
    34
  • Issue
    6
  • fYear
    1987
  • Firstpage
    1460
  • Lastpage
    1463
  • Abstract
    This paper describes radiation test results of a radiation hard CMOS technology with 1.0 μm minimum geometry features. The radiation goals of this technology are to ensure the MOS devices are functional after 10 Mrad total dose irradiation, are single event upset hardened to less than 1E-10 errors per bit-day, are transient upset immune to 1E9 rads/sec and are latch-up free.
  • Keywords
    CMOS technology; Current measurement; Degradation; Electrodes; Interface states; Leakage current; Testing; Threshold voltage; Transconductance; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1987.4337498
  • Filename
    4337498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912993