Title :
Influence of the preoxidation cleaning on the electrical properties of thin SIO2 layers
Author :
Prom, J.L. ; Castagne, J. ; Sarrabayrouse, G. ; Munoz-Yague, A.
Author_Institution :
Centre National de la Recherche Scientifique, Laboratoire d´´Automatique et d´´Analyse des Systÿmes, Toulouse, France
fDate :
2/1/1988 12:00:00 AM
Abstract :
The influence of a preoxidation cleaning procedure including an (HF + ethanol) step is investigated. It is shown that such a treatment gives a better thickness uniformity and improves the breakdown strength of silica layers.
Keywords :
electric breakdown of solids; electric strength; electronic conduction in insulating thin films; insulating thin films; semiconductor technology; silicon compounds; surface treatment; HF; breakdown strength; electrical properties; ethanol; preoxidation cleaning; semiconductor technology; silica layers; thickness uniformity; thin SiO2 layers;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1988.0005
