Title :
Influence of gallium in a metallisation on GaAs
Author :
Gupta, R.P. ; Wuerfl, J. ; Hartnagel, H.L. ; Khokle, W.S.
Author_Institution :
Central Electronics Engineering Research Institute, Semiconductor Devices Area, Pilani, India
fDate :
4/1/1988 12:00:00 AM
Abstract :
ESCA analysis of systems composed of Ge, Ga, Au layers alloyed to GaAs is reported to elucidate the influence of gallium in a metallisation scheme. The results reveal that a metal system containing gallium shows an absence of arsenic in the alloyed surface, and thus its presence precludes an early dissociation of GaAs. The metallurgical analyses are correlated to previously reported unstable performance of GaAs/Au contacts and thermally stable electrical behaviour of GaAs/Au/Ga Schottky diodes.
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium alloys; gallium arsenide; gold alloys; metallisation; semiconductor technology; semiconductor-metal boundaries; ESCA analysis; GaAs dissociation prevention; GaAs-Au contacts; GaAs-AuGa contacts; Schottky diodes; metallisation scheme; metallurgical analyses; semiconductors; thermally stable electrical behaviour; unstable performance;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1988.0006
