• DocumentCode
    913119
  • Title

    Transient analysis of schottky-barrier diodes

  • Author

    McCowen, A. ; Shaari, S.B.H. ; Board, K.

  • Author_Institution
    University of Wales, Department of Electrical and Electronic Engineering, Swansea, UK
  • Volume
    135
  • Issue
    3
  • fYear
    1988
  • fDate
    6/1/1988 12:00:00 AM
  • Firstpage
    71
  • Lastpage
    75
  • Abstract
    The turnon and turnoff transients of Schottky-barrier diode are determined by analysis based on thermionic emission across the metal-semiconductor barrier and a displacement current within the space charge region. The results of the analysis are compared to those from device simulator and are shown to be in excellent agreement. 10%; time constants for both turnon and turnoff transients are shown to be strongly controlled by the SBDs depletion capacitance reverse bias.
  • Keywords
    Schottky-barrier diodes; semiconductor-metal boundaries; space charge; thermionic emission; transient response; Schottky-barrier diodes; depletion capacitance; displacement current; metal-semiconductor barrier; reverse bias; semiconductor diodes; space charge region; thermionic emission; transient analysis; turnoff transients; turnon transient;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1988.0013
  • Filename
    4644454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=913119