Title :
Transient analysis of schottky-barrier diodes
Author :
McCowen, A. ; Shaari, S.B.H. ; Board, K.
Author_Institution :
University of Wales, Department of Electrical and Electronic Engineering, Swansea, UK
fDate :
6/1/1988 12:00:00 AM
Abstract :
The turnon and turnoff transients of Schottky-barrier diode are determined by analysis based on thermionic emission across the metal-semiconductor barrier and a displacement current within the space charge region. The results of the analysis are compared to those from device simulator and are shown to be in excellent agreement. 10%; time constants for both turnon and turnoff transients are shown to be strongly controlled by the SBDs depletion capacitance reverse bias.
Keywords :
Schottky-barrier diodes; semiconductor-metal boundaries; space charge; thermionic emission; transient response; Schottky-barrier diodes; depletion capacitance; displacement current; metal-semiconductor barrier; reverse bias; semiconductor diodes; space charge region; thermionic emission; transient analysis; turnoff transients; turnon transient;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1988.0013
