Title :
Measurement of Low-Energy X-Ray Dose Enhancement in MOS Devices with Metal Silicide Gates
Author :
Benedetto, J.M. ; Boesch, H.E., Jr. ; Oldham, T.R. ; Brown, G.A.
Author_Institution :
U. S. Army Laboratory Command Harry Diamond Laboratories Adelphi, MD 20783-1197
Abstract :
A photocurrent technique was used to accurately measure dose enhancement in the gate oxide of MOS devices with tungsten or titanium silicide over various thicknesses of poly-Si exposed to low-energy x-irradiation. The results show that the dose enhancement is strongly dependent on the type of metal/silicide used and the thickness of the poly-Si layer between the metal/silicide and the SiO2 gate insulator. A straightforward procedure for calculating the equal damage dose equivalence for metal/silicide over poly-Si gate MOS structures is also presented.
Keywords :
Electrons; Instruments; Ionizing radiation; Laboratories; MOS devices; Metal-insulator structures; Photoconductivity; Process design; Silicides; Thickness measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1987.4337512
