Title :
Temperature dependence of the MOS mobility degradation
Author :
Jones, B.K. ; Russell, P.C.
Author_Institution :
University of Lancaster, Department of Physics, Lancaster, UK
fDate :
8/1/1988 12:00:00 AM
Abstract :
The mobility of carriers in an MOS inversion layer appears to decrease as the degree of inversion increases. An investigation using Kelvin contact specimens has separated the extrinsic effect caused by the parasitic contact resistances to the channel and the intrinsic, surface scattering effect. The temperature dependence of the intrinsic effect is reported. The intrinsic effect appears to be process-dependent.
Keywords :
carrier mobility; metal-insulator-semiconductor devices; Kelvin contact specimens; MOS inversion layer; MOS mobility degradation; extrinsic effect; field effect devices; intrinsic effect; parasitic contact resistances; surface scattering effect; temperature dependence;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1988.0017
