DocumentCode
913179
Title
High-power millimeter wave IMPATT oscillators with both hole and electron drift spaces made by ion implantation
Author
Seidel, Thomas E. ; Scharfetter, D.L.
Volume
58
Issue
7
fYear
1970
fDate
7/1/1970 12:00:00 AM
Firstpage
1135
Lastpage
1136
Abstract
CW powers of 640 mW at 50 GHz have been obtained from double-drift region IMPATT diodes. This result represents the highest product of CW power times frequency squared obtained to date from any IMPATT diode. The diodes are p+pnn+structures and have both hole and electron drift spaces. The systematic fabrication (by ion implantation) and the evaluation of the dc and millimeter wave characteristics are presented.
Keywords
Annealing; Boron; Breakdown voltage; Capacitance; Charge carrier processes; Diodes; Fabrication; Ion implantation; Millimeter wave technology; Oscillators;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1970.7861
Filename
1449791
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