Title :
Experimental study of surface channel in insulated-gate field-effect transistor
Author :
Bandali, M.B. ; Wright, G.T.
Author_Institution :
University of Birmingham, Department of Electronic & Electrical Engineering, Birmingham, UK
Abstract :
A simple experimental technique is described for measuring the effective channel length and the surface-channel drift mobility in the insulated-gate field-effect transistor. Experimental results are presented for p channel transistors made in 8 ¿ cm silicon.
Keywords :
electron mobility; field effect transistors; effective channel length measurement; insulated gate field effect transistor; surface channel drift mobility measurement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710092
