Title :
A Model Describing Hot-Carrier and Radiation Effects in MOS Transistors
Author :
McBrayer, J.D. ; Pastorek, R.A. ; Jones, R.V. ; Ochoa, A., Jr.
Author_Institution :
Sandia National Laboratories Albuquerque, NM 87185
Abstract :
Data that describe the magnitude and type of damage created in MOS transistors by hot carrier and ionizing radiation environments is presented. The interaction of the effects of these types of damage is described by a qualitative model that divides the damage into two damage regions.
Keywords :
Charge carrier processes; Electron mobility; Electron traps; Hot carrier effects; Hot carriers; Interface states; MOSFETs; Radiation effects; Threshold voltage; Transconductance;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1987.4337530
