• DocumentCode
    913346
  • Title

    A Model Describing Hot-Carrier and Radiation Effects in MOS Transistors

  • Author

    McBrayer, J.D. ; Pastorek, R.A. ; Jones, R.V. ; Ochoa, A., Jr.

  • Author_Institution
    Sandia National Laboratories Albuquerque, NM 87185
  • Volume
    34
  • Issue
    6
  • fYear
    1987
  • Firstpage
    1647
  • Lastpage
    1651
  • Abstract
    Data that describe the magnitude and type of damage created in MOS transistors by hot carrier and ionizing radiation environments is presented. The interaction of the effects of these types of damage is described by a qualitative model that divides the damage into two damage regions.
  • Keywords
    Charge carrier processes; Electron mobility; Electron traps; Hot carrier effects; Hot carriers; Interface states; MOSFETs; Radiation effects; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1987.4337530
  • Filename
    4337530
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=913346