DocumentCode :
913362
Title :
Unusual transient properties of a wide silicon p-i-n diode
Author :
Leenov, D.
Volume :
58
Issue :
7
fYear :
1970
fDate :
7/1/1970 12:00:00 AM
Firstpage :
1156
Lastpage :
1158
Abstract :
Wide p-i-n silicon diodes exhibit time delays in transmitting current when voltage pulses or sine waves are applied. In explanation, it is assumed that appreciable conduction will not occur until neutral plasma completely fills the i layer, and that observed time delays are related to injected carrier drift times across the i layer.
Keywords :
Charge carrier processes; Delay effects; Frequency; P-i-n diodes; PIN photodiodes; Plasma properties; Plasma waves; Silicon; Space vector pulse width modulation; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1970.7877
Filename :
1449807
Link To Document :
بازگشت