• DocumentCode
    913374
  • Title

    Ionizing Radiation Hardness of GaAs Technologies

  • Author

    Listvan, M. A. ; Vold, P. J. ; Arch, D. K.

  • Author_Institution
    Honeywell Physical Sciences Center 10701 Lyndale Ave S., Bloomington, MN 55420
  • Volume
    34
  • Issue
    6
  • fYear
    1987
  • Firstpage
    1663
  • Lastpage
    1668
  • Abstract
    The radiation response of several GaAs technologies to ionizing radiation has been investigated. Self-aligned gate (SAG) E/D GaAs Metal Semiconductor FET (MESFET), SAG AlGaAs/GaAs Modulation Doped FET (MODFET), and complementary-AlGaAs/GaAs Heterostructure Insulated Gate FET (C-HIGFET) devices and circuits all demonstrated minimal sensitivity to total dose effects to 250 Mrad(GaAs). The heterostructure based technologies showed superior tolerance to high dose rate exposures, with upset levels exceeding 1×1010 rads(GaAs)/s.
  • Keywords
    FETs; Gallium arsenide; Implants; Ionizing radiation; MESFET circuits; MODFET circuits; Ohmic contacts; Resistors; Single event upset; Space technology;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1987.4337533
  • Filename
    4337533
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=913374