DocumentCode
913375
Title
On the gate current and noise behavior in pinched-off silicon junction field-effect transistors
Author
Nakahara, Mizuki ; Kobayashi, Ichiro
Volume
58
Issue
7
fYear
1970
fDate
7/1/1970 12:00:00 AM
Firstpage
1158
Lastpage
1159
Abstract
An exponential relation between the gate current of the silicon junction FET and the drain applied voltage is obtained experimentally. It is found that the noise enhancement and input impedance decrease of this device starts at a point corresponding to the appearance of the gate floating potential which is related to the gate current.
Keywords
Current measurement; FETs; Germanium; Impact ionization; Impedance; JFETs; Noise figure; Semiconductor device noise; Silicon; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1970.7878
Filename
1449808
Link To Document