Title :
A 1 to 2 µm silicon avalanche photodiode
Author :
Yang, Albert C. ; Taylor, R.W.
fDate :
7/1/1970 12:00:00 AM
Abstract :
Avalanche photodetection at wavelengths beyond the silicon band edge has been observed in palladium-silicon Schottky diodes. The devices are analogous to vacuum photomultipliers in that photo-excitation and gain take place in separata regions of the diode. Quantum efficiencias of 0.75 percent and avalanche multiplications > 200 have been observed at 1.3 µm.
Keywords :
Avalanche photodiodes; Electromagnetic heating; High power microwave generation; Nitrogen; Pulse circuits; Pulse generation; Pulsed power supplies; Schottky diodes; Silicon; Temperature;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7880
