DocumentCode :
913409
Title :
Radiation-Tolerant, Sidewall-Hardened SOI/MOS Transistors
Author :
Tsao, S.S. ; Fleetwood, D.M. ; Weaver, H.T. ; Pfeiffer, L. ; Celler, G.K.
Author_Institution :
Sandia National Laboratories Albuquerque, NM 87185
Volume :
34
Issue :
6
fYear :
1987
Firstpage :
1686
Lastpage :
1691
Abstract :
Total dose radiation effects were measured for sidewall-hardened n-channel SOI/MOS transistors, fabricated in zone-melt-recrystallized (ZMR) and oxygen-implanted (SIMOX) SOI materials. We compare the radiation responses of transistors with three types of sidewall or edge configurations: island transistors with passivated edges, island transistors without passivated edges, and edgeless (enclosed-gate) transistors. Data from these three test devices allow clear separation of front-, back-, and edge-channel conduction. Passivated edge channels were hard to Co-60 doses in excess of 24 Mrad(Si). The overall hardness of the passivated-edge transistors is limited only by the radiation-induced threshold voltage shifts (about -1 V at 1.0 Mrad) of the top channel. No significant differences in total-dose response of ZMR and SIMOX devices were observed under the radiation conditions employed.
Keywords :
CMOS technology; Insulation; Isolation technology; MOS devices; MOSFETs; Radiation effects; Radiation hardening; Silicon on insulator technology; Substrates; Threshold voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1987.4337537
Filename :
4337537
Link To Document :
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