DocumentCode
913438
Title
Comparative Study of Gamma-Ray-Irradiation Effects on N-Type GaAs and InP
Author
Kitagawa, Michiharu ; Nakamura, Koji
Author_Institution
Physics Division, Radiation Center of Osaka Prefecture, 704 Shinke-cho, Sakai, Osaka 593 Japan
Volume
34
Issue
6
fYear
1987
Firstpage
1704
Lastpage
1708
Abstract
Radiation damage effects on electrical properties of n-type GaAs and InP bulk crystals have been investigated. Higher tolerance of InP to gamma-ray irradiation than GaAs was observed. The effects on GaAs strongly depend on the initial carrier concentration. Ihe critical value of concentration is taken to correspond to the border value of metal-nonmetal transition introduced by Mott. All InP samples with several different carrier concentrations showed almost completely unchanged properties after 1×109 R irradiation at 44°C. This extreme tolerance in InP to irradiation is believed to be caused by annihilation of unstable defects and also association of oppositely charged defects.
Keywords
Atmospheric measurements; Conductivity measurement; Crystals; Electrodes; Electrons; Gallium arsenide; Impurities; Indium phosphide; Magnetic field measurement; Temperature sensors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1987.4337540
Filename
4337540
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