Title :
Single Event Upset in SOS Integrated Circuits
Author :
Rollins, J.G. ; Choma, J., Jr. ; Kolasinski, W.A.
Author_Institution :
The Aerospace Corporation P. O. Box 92957 Los Angeles CA. 90009 and Department of Electrical Engineering-Electrophysics University of Southern California Los Angeles CA 90089-0271
Abstract :
Single event upset (SEU) by argon and krypton ions has been observed in 1.25 micron CMOS-SOS integrated circuits. Mixed-mode PISCES-SPICE, circuit-device simulations were conducted and the calculated LET threshold compared favorably to experimental data. Analysis with the two-dimensional finite element PISCES code has revealed the upset charge collection mechanism involves charge multiplication due to bipolar action.
Keywords :
Aerospace engineering; Circuit simulation; Computational modeling; Cyclotrons; Finite element methods; Integrated circuit modeling; MOSFET circuits; SPICE; Single event upset; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1987.4337542
