DocumentCode
913463
Title
Single Event Upset in SOS Integrated Circuits
Author
Rollins, J.G. ; Choma, J., Jr. ; Kolasinski, W.A.
Author_Institution
The Aerospace Corporation P. O. Box 92957 Los Angeles CA. 90009 and Department of Electrical Engineering-Electrophysics University of Southern California Los Angeles CA 90089-0271
Volume
34
Issue
6
fYear
1987
Firstpage
1713
Lastpage
1717
Abstract
Single event upset (SEU) by argon and krypton ions has been observed in 1.25 micron CMOS-SOS integrated circuits. Mixed-mode PISCES-SPICE, circuit-device simulations were conducted and the calculated LET threshold compared favorably to experimental data. Analysis with the two-dimensional finite element PISCES code has revealed the upset charge collection mechanism involves charge multiplication due to bipolar action.
Keywords
Aerospace engineering; Circuit simulation; Computational modeling; Cyclotrons; Finite element methods; Integrated circuit modeling; MOSFET circuits; SPICE; Single event upset; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1987.4337542
Filename
4337542
Link To Document